FDD86110
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD86110
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 3.1 W 100 V Continuous Drain Current (ID):12.5 A 35 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 3.1 W |
| Number of Channels | 1 |
| Input capacitance | 2265 pF |
| Continuous Drain Current (ID) | 12.5 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 10.2 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 2 V |
Stock: 107
Distributors
pcbx
pcbxUnit Price$2.44445
Ext.Price$2.44445
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.44445 | $2.44445 |
| 10 | $2.11728 | $21.17280 |
| 25 | $1.97618 | $49.40450 |
| 50 | $1.84448 | $92.22400 |
| 100 | $1.72156 | $172.15600 |
| 300 | $1.67265 | $501.79500 |
| 500 | $1.62514 | $812.57000 |
| 1000 | $1.58382 | $1583.82000 |